Gallium indium arsenide antimonide phosphide
Encyclopedia
Gallium indium arsenide antimonide phosphide ( or GaInPAsSb) is a semiconductor material.

Research has shown that GaInAsSbP can be used in the manufacture of mid-infrared light-emitting diode
Light-emitting diode
A light-emitting diode is a semiconductor light source. LEDs are used as indicator lamps in many devices and are increasingly used for other lighting...

s and thermophotovoltaic
Thermophotovoltaic
Thermophotovoltaic energy conversion is a direct conversion process from heat differentials to electricity via photons. A basic thermophotovoltaic system consists of a thermal emitter and a photovoltaic diode cell....

 cells.

GaInAsSbP layers can be grown by heteroepitaxy on indium arsenide, gallium antimonide and other materials. The exact composition can be tuned in order to make it lattice matched
Lattice constant
The lattice constant [or lattice parameter] refers to the constant distance between unit cells in a crystal lattice. Lattices in three dimensions generally have three lattice constants, referred to as a, b, and c. However, in the special case of cubic crystal structures, all of the constants are...

. The presence of five elements in the alloy allows extra degrees of freedom, making it possible to fix the lattice constant while varying the bandgap.

See also

  • Aluminium gallium phosphide
    Aluminium gallium phosphide
    Aluminium gallium phosphide, P, a phosphide of aluminium and gallium, is a semiconductor material. It is an alloy of aluminium phosphide and gallium phosphide. It is used to manufacture light-emitting diodes emitting green light.-External links:*...

  • Aluminium gallium indium phosphide
    Aluminium gallium indium phosphide
    Aluminium gallium indium phosphide is a semiconductor material.AlGaInP is used in manufacture of light-emitting diodes of high-brightness red, orange, green, and yellow color, to form the heterostructure emitting light...

  • Indium gallium arsenide phosphide
  • Indium arsenide antimonide phosphide
    Indium arsenide antimonide phosphide
    Indium arsenide antimonide phosphide is a semiconductor material.InAsSbP has been widely used as blocking layers for semiconductor laser structures, as well as for the mid-infrared light-emitting diodes, photodetectors and thermophotovoltaic cells....

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