Indium arsenide antimonide phosphide () is a semiconductor material.

InAsSbP has been widely used as blocking layers for semiconductor laser

Laser

A laser is a device that emits light through a process of optical amplification based on the stimulated emission of photons. The term "laser" originated as an acronym for Light Amplification by Stimulated Emission of Radiation...

 structures, as well as for the mid-infrared light-emitting diode

Light-emitting diode

A light-emitting diode is a semiconductor light source. LEDs are used as indicator lamps in many devices and are increasingly used for other lighting...

s, photodetectors and thermophotovoltaic cells.

InAsSbP layers can be grown by heteroepitaxy on indium arsenide, gallium antimonide and other materials. The vibrational properties of the alloy has been investigated by Raman spectroscopy.

See also

• Aluminium gallium indium phosphide
  Aluminium gallium indium phosphide
  Aluminium gallium indium phosphide is a semiconductor material.AlGaInP is used in manufacture of light-emitting diodes of high-brightness red, orange, green, and yellow color, to form the heterostructure emitting light...
  
  
• Indium gallium arsenide phosphide
• Gallium indium arsenide antimonide phosphide
  Gallium indium arsenide antimonide phosphide
  Gallium indium arsenide antimonide phosphide is a semiconductor material.Research has shown that GaInAsSbP can be used in the manufacture of mid-infrared light-emitting diodes and thermophotovoltaic cells....