Universal memory
Encyclopedia
Universal memory may mean:
- any memory device combining cost benefits of DRAMDramDram or DRAM may refer to:As a unit of measure:* Dram , an imperial unit of mass and volume* Armenian dram, a monetary unit* Dirham, a unit of currency in several Arab nationsOther uses:...
, speed of SRAMStatic random access memoryStatic random-access memory is a type of semiconductor memory where the word static indicates that, unlike dynamic RAM , it does not need to be periodically refreshed, as SRAM uses bistable latching circuitry to store each bit...
, and non-volatility of flash memoryFlash memoryFlash memory is a non-volatile computer storage chip that can be electrically erased and reprogrammed. It was developed from EEPROM and must be erased in fairly large blocks before these can be rewritten with new data...
- magnetoresistive random-access memory (MRAMMRAMMagnetoresistive Random-Access Memory is a non-volatile computer memory technology that has been under development since the 1990s. Continued increases in density of existing memory technologies – notably flash RAM and DRAM – kept it in a niche role in the market, but its proponents...
) - Bubble memoryBubble memoryBubble memory is a type of non-volatile computer memory that uses a thin film of a magnetic material to hold small magnetized areas, known as bubbles or domains, each storing one bit of data...
- Racetrack memoryRacetrack memoryRacetrack memory is an experimental non-volatile memory device under development at IBM's Almaden Research Center by a team led by Stuart Parkin. In early 2008, a 3-bit version was successfully demonstrated...
- ferroelectric random-access memory (FRAMFerroelectric RAMFerroelectric RAM is a random-access memory similar in construction to DRAM but uses a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile memory technologies that offer the same functionality as Flash memory...
) - phase-change memory (PCMPhase-change memoryPhase-change memory is a type of non-volatile computer memory. PRAMs exploit the unique behavior of chalcogenide glass. Heat produced by the passage of an electric current switches this material between two states, crystalline and amorphous...
) - programmable metallization cell (PMCProgrammable metallization cellThe programmable metallization cell, or PMC, is a new form of non-volatile computer memory being developed at Arizona State University and its spinoff, Axon Technologies....
) - resistive random-access memory (RRAM)
- magnetoresistive random-access memory (MRAM
- Universal memory architecture