Stress Induced Leakage Current (SILC) is an increase in the gate leakage current

Leakage (semiconductors)

In semiconductor devices, leakage is a quantum phenomenon where mobile charge carriers tunnel through an insulating region. Leakage increases exponentially as the thickness of the insulating region decreases. Tunneling leakage can also occur across semiconductor junctions between heavily doped...

 of a MOSFET

MOSFET

The metal–oxide–semiconductor field-effect transistor is a transistor used for amplifying or switching electronic signals. The basic principle of this kind of transistor was first patented by Julius Edgar Lilienfeld in 1925...

, due to defects created in the gate oxide

Gate oxide

The gate oxide is the dielectric layer that separates the gate terminal of a MOSFET from the underlying source and drain terminals as well as the conductive channel that connects source and drain when the transistor is turned on. Gate oxide is formed by oxidizing the silicon of the channel to form...

 during electrical stressing. SILC is perhaps the largest factor inhibiting device miniaturization. Increased leakage is a common failure mode of electronic devices

Failure modes of electronics

Electronic components have a wide range of failure modes. These can be classified in various ways, such as by time or cause. Failures can be caused by excess temperature, excess current or voltage, ionizing radiation, mechanical shock, stress or impact, and many other causes...

.

Oxide defects

The most well-studied defects assisting in the leakage current are those produced by charge trapping in the oxide. This model provides a point of attack and has stimulated researchers to develop methods to decrease the rate of charge trapping by mechanisms such as nitrous oxide (N₂O)

Nitrous oxide

Nitrous oxide, commonly known as laughing gas or sweet air, is a chemical compound with the formula . It is an oxide of nitrogen. At room temperature, it is a colorless non-flammable gas, with a slightly sweet odor and taste. It is used in surgery and dentistry for its anesthetic and analgesic...

 nitridation of the oxide.