All Topics  
Scanning capacitance microscopy

 

   Email Print
   Bookmark   Link






 

Scanning capacitance microscopy



 
 
Scanning capacitance microscopy (SCM) is a variety of scanning probe microscopy
Scanning probe microscopy

Scanning Probe Microscopy is a branch of microscopy that forms images of surfaces using a physical probe that scans the specimen. An image of the surface is obtained by mechanically moving the probe in a raster scan of the specimen, line by line, and recording the probe-surface interaction as a function of position....
 in which a narrow probe electrode is held just above the surface of a sample and scanned across the sample. SCM characterizes the surface of the sample using information obtained from the change in electrostatic capacitance between the surface and the probe.

More precisely SCM uses an ultra-sharp conducting probe (often Pt/Ir or Co/Cr metal covering an etched silicon probe) to form a metal-insulator-semiconductor (MIS/MOS) capacitor with a semiconductor sample if a native oxide is present.






Discussion
Ask a question about 'Scanning capacitance microscopy'
Start a new discussion about 'Scanning capacitance microscopy'
Answer questions from other users
Full Discussion Forum



Encyclopedia


Scanning capacitance microscopy (SCM) is a variety of scanning probe microscopy
Scanning probe microscopy

Scanning Probe Microscopy is a branch of microscopy that forms images of surfaces using a physical probe that scans the specimen. An image of the surface is obtained by mechanically moving the probe in a raster scan of the specimen, line by line, and recording the probe-surface interaction as a function of position....
 in which a narrow probe electrode is held just above the surface of a sample and scanned across the sample. SCM characterizes the surface of the sample using information obtained from the change in electrostatic capacitance between the surface and the probe.

More precisely SCM uses an ultra-sharp conducting probe (often Pt/Ir or Co/Cr metal covering an etched silicon probe) to form a metal-insulator-semiconductor (MIS/MOS) capacitor with a semiconductor sample if a native oxide is present. When no oxide is present, a Schottky capacitor is formed. When the probe and surface are in contact, an AC bias is applied, generating capacitance variations in the sample which can be detected using a GHz resonant capacitance sensor. The tip is then scanned across the semiconductor's surface in 2D while the tip's height is controlled by conventional contact force feedback .

By applying an alternating bias to the metal-coated probe, carriers alternately accumulate and deplete within the semiconductor’s surface layers, changing the tip-sample capacitance. The magnitude of this change in capacitance with the applied voltage gives information about the concentration of carriers (SCM amplitude data), whereas the difference in phase between the capacitance change and the applied, alternating bias carries information about the sign of the charge carriers (SCM phase data). Because SCM functions even through an insulating layer, a finite conductivity is not required to measure the electrical properties.

Limit of resolution of SCM

On the conducting surfaces, the limit of resolution at the scale of 2nm is estimated . For the high resolution, the quick analysis of capacitance of a capacitor with rough electrode is required

. The limit of resolution of SCM seems to be an order of magnitude better than that estimated for the atomic nanoscope
Atomic nanoscope

The atomic de Broglie microscope is an imaging system which is expected to provide resolution at the nanometer scale....
; however, as other kinds of the probe microscopy, SCM requires careful preparation of the analyzed surface, which is supposed to be almost flat.