Indium gallium nitride (InGaN, _x1-x) is a semiconductor material made of a mix of gallium nitride (GaN) and indium nitride (InN). It is a ternary group III

Boron group

The boron group is the series of elements in group 13 of the periodic table, comprising boron , aluminium , gallium , indium , thallium , and ununtrium . The elements in the boron group are characterized by having three electrons in their outer energy levels...

/group V

Nitrogen group

The nitrogen group is a periodic table group consisting of nitrogen , phosphorus , arsenic , antimony , bismuth and ununpentium ....

 direct bandgap semiconductor

Semiconductor

A semiconductor is a material with electrical conductivity due to electron flow intermediate in magnitude between that of a conductor and an insulator. This means a conductivity roughly in the range of 103 to 10−8 siemens per centimeter...

. Its bandgap can be tuned by varying the amount of indium in the alloy. The ratio of In/Ga is usually between 0.02/0.98 and 0.3/0.7.
Indium gallium nitride is the light-emitting layer in modern blue and green LED

LEd

LEd is a TeX/LaTeX editing software working under Microsoft Windows. It is a freeware product....

s and often grown on a GaN

Gan

Gan may refer to:-Computing and telecommunications:*.gan, the file extension for documents created by GanttProject*Generic Access Network formerly known as Unlicensed Mobile Access *Global Area Network- Mythology :...

 buffer on a transparent substrate as, e.g.