Gunn diode
A Gunn diode, also known as a transferred electron device is a form of
diode used in high-frequency
electronics. It is somewhat unusual in that it consists only of N-doped
semiconductor material, whereas most diodes consist of both P and N-doped regions. In the Gunn diode, three regions exist: two of them are heavily N-doped on each terminal, with a thin layer of lightly doped material in between. When a voltage is applied to the device, the electrical gradient will be largest across the thin middle layer. Eventually, this layer starts to conduct, reducing the gradient across it, preventing further conduction.
Encyclopedia
A
Gunn diode, also known as a
transferred electron device is a form of
diode used in high-frequency
electronics. It is somewhat unusual in that it consists only of N-doped
semiconductor material, whereas most diodes consist of both P and N-doped regions. In the Gunn diode, three regions exist: two of them are heavily N-doped on each terminal, with a thin layer of lightly doped material in between. When a voltage is applied to the device, the electrical gradient will be largest across the thin middle layer. Eventually, this layer starts to conduct, reducing the gradient across it, preventing further conduction. In practice, this means a Gunn diode has a region of
negative differential resistance.
The negative resistance, combined with the timing properties of the intermediate layer, allows construction of an
RF relaxation oscillator simply by applying a suitable
direct current through the device. The oscillation frequency is determined partly by the properties of the thin middle layer, but can be adjusted by external factors. Gunn diodes are therefore used to build oscillators in the 10 GHz and higher frequency range, where a resonant cavity is usually added to control frequency. The resonator can be based on a waveguide, coaxial cavity, YIG resonator, etc. Tuning is done mechanically, by adjusting the parameters of the resonator, or in case of YIG resonators by electric current.
Gallium arsenide Gunn diodes are made for frequencies up to 200 GHz, gallium nitride materials can reach up to 3 terahertz.
Radio Amateur Use
By virtue of their low voltage operation, Gunn diodes can serve as microwave frequency generators for very low powered microwave transmitters. In the late 1970s they were being used by some radio amateurs in Britain . Designs for transmitters were published in journals. They typically consisted simply of an approximately 3 inch waveguide into which the diode was mounted. A low voltage direct current power supply that could be modulated appropriately was used to drive the diode. The waveguide was blocked at one end to form a resonant cavity and the other end ideally fed a parabolic dish.
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