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Aluminium gallium arsenide

Aluminium gallium arsenide is a semiconductor material with very nearly the same lattice constant as GaAs, but a larger bandgap Band gap

In solid state physics [i] and related applied fields, the band gap is the energy difference between the ... 

. The x in the formula above is a number between 0 and 1 - this indicates an arbitrary alloy Alloy

An alloy is a combination, either in solution [i] or compound [i], of two or more elements [i] ... 

 between GaAs and AlAs Aluminium arsenide

Aluminium arsenide, AlAs, is a semiconductor material [i] with almost the same lattice constant [i] as GaAs [i] ... 

. The bandgap varies between 1.42 eV  and 2.16 eV . For x < 0.4, the bandgap is direct. The formula AlGaAs should be considered an abbreviated form of the above, rather than any particular ratio. Aluminium gallium arsenide is used as a barrier material in GaAs based heterostructure devices.

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Aluminium gallium arsenide
Systematic name IUPAC nomenclature

IUPAC nomenclature is a system of naming chemical compound [i]s and of describing the science of chemistry [i] ... 

Aluminium gallium arsenide
Other names xxx, xxx
Molecular formula Chemical formula

A chemical formula is a concise way of expressing information about the atom [i]s that constitute a par ... 

XxXxXx
Molar mass xx.xx g/mol
CAS number [xx-xx-xx]
Density x.xxx g/cm³
Solubility x.xx g/l
Melting point xx.x °C
Boiling point xx.x °C

Aluminium gallium arsenide is a semiconductor material with very nearly the same lattice constant as GaAs, but a larger bandgap Band gap

In solid state physics [i] and related applied fields, the band gap is the energy difference between the ... 

. The x in the formula above is a number between 0 and 1 - this indicates an arbitrary alloy Alloy

An alloy is a combination, either in solution [i] or compound [i], of two or more elements [i] ... 

 between GaAs and AlAs Aluminium arsenide

Aluminium arsenide, AlAs, is a semiconductor material [i] with almost the same lattice constant [i] as GaAs [i]... 

.

The bandgap varies between 1.42 eV  and 2.16 eV . For x < 0.4, the bandgap is direct.

The formula AlGaAs should be considered an abbreviated form of the above, rather than any particular ratio.

Aluminium gallium arsenide is used as a barrier material in GaAs based heterostructure devices. The AlGaAs layer confines the electrons to a gallium arsenide region. An example of such a device is a quantum well infrared photodetector .

See also

  • Aluminium arsenide Aluminium arsenide

    Aluminium arsenide, AlAs, is a semiconductor material [i] with almost the same lattice constant [i] as GaAs [i]... 

  • Gallium arsenide

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