A-RAM
Encyclopedia
A-RAM, Advanced-Random Access Memory is a new DRAM
memory based on single-transistor capacitor-less cells. A-RAM was invented in 2009 at the University of Granada
, UGR (Spain) in collaboration with the Centre National de la Recherche Scientifique
, CNRS (France). It was conceived by Dr. Noel Rodriguez (UGR), Prof. Francisco Gamiz (UGR) and Prof. Sorin Cristoloveanu (CNRS). A-RAM is compatible with single-gate Silicon on insulator
(SOI), double-gate, FinFETs and multiple-gate FETs (MuFETs).
The conventional 1-Transistor + 1-Capacitor DRAM is extensively used in the semiconductor industry for manufacturing high density dynamic memories. Beyond the 45 nm node, the DRAM industry will need new concepts avoiding the miniaturization issue of the memory-cell capacitor. The 1T-DRAM family of memories, where the A-RAM is included, replaces the storage capacitor for the floating body of SOI transistors to store the charge.
Dram
Dram or DRAM may refer to:As a unit of measure:* Dram , an imperial unit of mass and volume* Armenian dram, a monetary unit* Dirham, a unit of currency in several Arab nationsOther uses:...
memory based on single-transistor capacitor-less cells. A-RAM was invented in 2009 at the University of Granada
University of Granada
The University of Granada is a public university located in Granada, Spain that enrolls approximately 80,000 students. The university also has campuses in Ceuta and Melilla. Every year, over 2,000 European students enroll in the UGR through the Erasmus Programme, making it the most popular...
, UGR (Spain) in collaboration with the Centre National de la Recherche Scientifique
Centre national de la recherche scientifique
The National Center of Scientific Research is the largest governmental research organization in France and the largest fundamental science agency in Europe....
, CNRS (France). It was conceived by Dr. Noel Rodriguez (UGR), Prof. Francisco Gamiz (UGR) and Prof. Sorin Cristoloveanu (CNRS). A-RAM is compatible with single-gate Silicon on insulator
Silicon on insulator
Silicon on insulator technology refers to the use of a layered silicon-insulator-silicon substrate in place of conventional silicon substrates in semiconductor manufacturing, especially microelectronics, to reduce parasitic device capacitance and thereby improving performance...
(SOI), double-gate, FinFETs and multiple-gate FETs (MuFETs).
The conventional 1-Transistor + 1-Capacitor DRAM is extensively used in the semiconductor industry for manufacturing high density dynamic memories. Beyond the 45 nm node, the DRAM industry will need new concepts avoiding the miniaturization issue of the memory-cell capacitor. The 1T-DRAM family of memories, where the A-RAM is included, replaces the storage capacitor for the floating body of SOI transistors to store the charge.